Analytical solution of the navier-stokes equations for heat and mass transfer processes during the growth of silicon carbide single crystals

A system of Navier-Stokes equations for the diffusion of gas mixture components is obtained and an approximate analytical solution describing the stationary stage of the silicon carbide single crystal growth process is found. Temperature distributions and concentrations of the mixture components in the growth chamber are obtained. The radial profiles of the crystal growth rate at the initial and final stages of growth are determined. The estimation of the crystal growth rate is consistent with the results of numerical calculations by other authors and the available experimental data. The solutions found can be used in the development of systems for automatic regulation and control of the growth processes of perfect SiC single crystals.

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